Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
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چکیده
منابع مشابه
Prediction of IMD in LDMOS Transistor Amplifiers Using a New Large-Signal Model
In this paper, the intermodulation distortion (IMD) behavior of LDMOS transistors is treated. First, an analysis is performed to explain measured IMD characteristics in different classes of operation. It is shown that the turn-on region plays an important role in explaining measured IMD behavior, which may also give a clue to the excellent linearity of LDMOS transistors. Thereafter, with this k...
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In this paper, large-signal intermodulation distortion (IMD) sweet spots in microwave power amplifiers are studied and predicted using a new mathematical basis. The variations in the IMD versus drive pattern with active bias point and the terminating matching networks are investigated. This nonlinear distortion model enabled the design of power amplifiers specially tailored to present a desired...
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Simulation of Ldmos High Frequency Power Transistor
Two important properties of an RF LDMOS power transistor are the high-voltage performance and the high-frequency performance. This thesis begins with the design of an initial device model based on a Motorola RF LDMOS product. The effects of varying drift length, n-epi layer doping concentration and thickness are then investigated by simulation using Academi2d software. Each parameter is varied ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Microwave Theory and Techniques
سال: 2002
ISSN: 0018-9480
DOI: 10.1109/tmtt.2002.805187